ABOVE-BAND-GAP PHOTOLUMINESCENCE FROM SI FINE PARTICLES WITH OXIDE SHELL

被引：118

作者：

MORISAKI, H

PING, FW

ONO, H

YAZAWA, K

机构：

[1] University of Electro-Communications, Chofu-shi

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 03期

关键词：

D O I：

10.1063/1.349510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong photoluminescence with sub-band-gap photon energies has been observed in fine Si particles prepared by the gas-evaporation technique. After surface oxidation, the Si particles show above-band-gap photoluminescence, the band tail covering the visible light region. The amount of the increased apparent band gap (0.3 eV) estimated from this blueshift can be explained by a quantum-size effect expected to be observed in Si quantum dots with a diameter of 50 angstrom.

引用

收藏

页码：1869 / 1870

页数：2

相关论文

共 13 条

[1] ZERO-DIMENSIONAL EXCITONS IN SEMICONDUCTOR CLUSTERS [J].

BRUS, L .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1909-1914

[2] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].

BRUS, LE .

JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (09) :4403-4409

[3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[4]

EFROS AL, 1982, SOV PHYS SEMICOND+, V16, P772

[5]

EKIMOV AI, 1982, SOV PHYS SEMICOND+, V16, P775

[6] QUANTUM SIZE EFFECT IN SEMICONDUCTOR MICROCRYSTALS [J].

EKIMOV, AI ;

EFROS, AL ;

ONUSHCHENKO, AA .

SOLID STATE COMMUNICATIONS, 1985, 56 (11) :921-924

[7] 3-DIMENSIONAL QUANTUM WELL EFFECTS IN ULTRAFINE SILICON PARTICLES [J].

FURUKAWA, S ;

MIYASATO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2207-L2209

[8] QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H [J].

FURUKAWA, S ;

MIYASATO, T .

PHYSICAL REVIEW B, 1988, 38 (08) :5726-5729

[9] DEGENERATE 4-WAVE MIXING IN SEMICONDUCTOR-DOPED GLASSES [J].

JAIN, RK ;

LIND, RC .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1983, 73 (05) :647-653

[10] FEMTOSECOND CARRIER RELAXATION IN SEMICONDUCTOR-DOPED GLASSES [J].

NUSS, MC ;

ZINTH, W ;

KAISER, W .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1717-1719