XPS DETERMINATION OF AMOUNT OF INCORPORATED RARE-GAS IN AMORPHOUS-SILICON FILMS PRODUCED WITH REACTIVE SPUTTERING METHOD

被引:6
作者
USAMI, K [1 ]
KATAYAMA, Y [1 ]
SHIMADA, T [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
关键词
D O I
10.1143/JJAP.19.2065
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2065 / 2068
页数:4
相关论文
共 5 条
[1]   SPONTANEOUS INCLUSION OF OXYGEN IN SPUTTER-DEPOSITED AMORPHOUS-SILICON DURING AND AFTER FABRICATION [J].
IMURA, T ;
USHITA, K ;
HIRAKI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L65-L68
[2]   INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON [J].
PAWLEWICZ, WT .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5595-5601
[3]   QUANTITATIVE CHEMICAL-ANALYSIS BY ESCA [J].
PENN, DR .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 9 (01) :29-40
[4]   HARTREE-SLATER SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AT 1254 AND 1487EV [J].
SCOFIELD, JH .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (02) :129-137
[5]   ROLE OF ARGON INVOLVED IN PLASMA-DEPOSITED AMORPHOUS SI-H FILMS [J].
TANAKA, K ;
YAMASAKI, S ;
NAKAGAWA, K ;
MATSUDA, A ;
OKUSHI, H ;
MATSUMURA, M ;
IIZIMA, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :475-480