XPS DETERMINATION OF AMOUNT OF INCORPORATED RARE-GAS IN AMORPHOUS-SILICON FILMS PRODUCED WITH REACTIVE SPUTTERING METHOD

被引：6

作者：

USAMI, K ^{[1
]}

KATAYAMA, Y ^{[1
]}

SHIMADA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 11期

关键词：

D O I：

10.1143/JJAP.19.2065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2065 / 2068

页数：4

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[1] SPONTANEOUS INCLUSION OF OXYGEN IN SPUTTER-DEPOSITED AMORPHOUS-SILICON DURING AND AFTER FABRICATION
IMURA, T
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L65 - L68
[2] INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON
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[3] QUANTITATIVE CHEMICAL-ANALYSIS BY ESCA
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[4] HARTREE-SLATER SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AT 1254 AND 1487EV
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[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (02) : 129 - 137
[5] ROLE OF ARGON INVOLVED IN PLASMA-DEPOSITED AMORPHOUS SI-H FILMS
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