PMOS TRANSISTORS IN LPCVD POLYCRYSTALLINE SILICON-GERMANIUM FILMS

被引：36

作者：

KING, TJ ^{[1
]}

SARASWAT, KC ^{[1
]}

PFIESTER, JR ^{[1
]}

机构：

[1] MOTOROLA INC,ADV PROD RES & DEV LAB,AUSTIN,TX 78721

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

D O I：

10.1109/55.119205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-channel MOS thin-film transistors (TFT's) have been fabricated in low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon-germanium (poly-SiGe) films using either a low-temperature ( less-than-or-equal-to 600-degrees-C) process or a high-temperature (up to 950-degrees-C) process. Transistors with drawn channel lengths as small as 2-mu-m show well-behaved characteristics. A poly-SiGe TFT technology allows the use of lower anneal temperatures and shorter anneal times as compared to a poly-Si TFT technology. Therefore, it is attractive for a variety of applications including 3-D integrated circuits and large-area display drivers.

引用

页码：584 / 586

页数：3

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