RADIATION HARDENING OF A HIGH-VOLTAGE IC TECHNOLOGY (BCDMOS)

被引：4
作者：
DESKO, JC
DARWISH, MN
DOLLY, MC
GOODWIN, CA
DAWES, WR
TITUS, JL
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
[2] USN,CTR WEAP SUPPORT,CRANE,IN 47522
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期
关键词：
D O I：
10.1109/23.101234
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A program was undertaken to radiation harden AT&T's existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology. © 1990 IEEE
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收藏
页码：2083 / 2088
页数：6
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