ADSORPTION OF BORON ON SI(111) - ITS EFFECT ON SURFACE ELECTRONIC STATES AND RECONSTRUCTION

被引：269

作者：

LYO, IW

KAXIRAS, E

AVOURIS, P

机构：

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.63.1261

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1261 / 1264

页数：4

共 15 条

[1] ATOM-RESOLVED SURFACE-CHEMISTRY STUDIED BY SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY [J].

AVOURIS, P ;

WOLKOW, R .

PHYSICAL REVIEW B, 1989, 39 (08) :5091-5100

[2] STRUCTURAL-ENERGY CALCULATIONS BASED ON NORM-CONSERVING PSEUDOPOTENTIALS AND LOCALIZED GAUSSIAN-ORBITALS [J].

BACHELET, GB ;

GREENSIDE, HS ;

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1981, 24 (08) :4745-4752

[3] GEOMETRIC AND LOCAL ELECTRONIC-STRUCTURE OF SI(111)-AS [J].

BECKER, RS ;

SWARTZENTRUBER, BS ;

VICKERS, JS ;

HYBERTSEN, MS .

PHYSICAL REVIEW LETTERS, 1988, 60 (02) :116-119

[4]

BOSZO F, UNPUB

[5] ELECTRONIC-STRUCTURE OF LOCALIZED SI DANGLING-BOND DEFECTS BY TUNNELING SPECTROSCOPY [J].

HAMERS, RJ ;

DEMUTH, JE .

PHYSICAL REVIEW LETTERS, 1988, 60 (24) :2527-2530

[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND AUGER-ELECTRON SPECTROSCOPIC STUDY ON B/SI(111) SURFACES [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

SURFACE SCIENCE, 1988, 193 (1-2) :L47-L52

[7] INHOMOGENEOUS ELECTRON-GAS [J].

RAJAGOPAL, AK ;

CALLAWAY, J .

PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919

[8] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].

KOHN, W ;

SHAM, LJ .

PHYSICAL REVIEW, 1965, 140 (4A) :1133-&

[9] NONEQUILIBRIUM BORON DOPING EFFECTS IN LOW-TEMPERATURE EPITAXIAL SILICON FILMS [J].

MEYERSON, BS ;

LEGOUES, FK ;

NGUYEN, TN ;

HARAME, DL .

APPLIED PHYSICS LETTERS, 1987, 50 (02) :113-115

[10] UNOCCUPIED SURFACE-STATES REVEALING THE SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-AL, SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-GA, AND SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-IN ADATOM GEOMETRIES [J].

NICHOLLS, JM ;

REIHL, B ;

NORTHRUP, JE .

PHYSICAL REVIEW B, 1987, 35 (08) :4137-4140

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