LOW-PRESSURE SILICON EPITAXY

被引：56

作者：

OGIRIMA, M ^{[1
]}

SAIDA, H ^{[1
]}

SUZUKI, M ^{[1
]}

MAKI, M ^{[1
]}

机构：

[1] HITACHI LTD,CTR RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 06期

关键词：

D O I：

10.1149/1.2133450

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：903 / 908

页数：6

共 9 条

[1]

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[6] SILICON EPITAXIAL WAFER WITH ABRUPT INTERFACE BY 2-STEP EPITAXIAL-GROWTH TECHNIQUE [J].

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[7]

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[8]

SUGAWARA K, CHEMICAL VAPOR DEPOS

[9] GAS-FLOW PATTERN AND MASS-TRANSFER ANALYSIS IN A HORIZONTAL FLOW REACTOR FOR CHEMICAL VAPOR-DEPOSITION [J].

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