ELECTRON-EMISSION FROM PHOSPHORUS-DOPED AND BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS

被引：97

作者：

OKANO, K

GLEASON, KK

机构：

[1] Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 01期

关键词：

DIAMOND; ELECTRON EMISSION; ELECTRON FIELD EMISSION;

D O I：

10.1049/el:19950027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron emission from CVD-grown phosphorus (P)- and boron (B)-doped polycrystalline diamond films has been studied. The current density against electric field characteristics of the P-doped film showed low-field emission compared to the B-doped film. From the slope ratio of the Fowler-Nordheim (F-N) characteristics of P- and B-doped films, a ratio of 0.66 for the emission barrier height was obtained. The small ratio might be caused by the n-type semiconducting properties of P-doped diamond films.

引用

页码：74 / 75

页数：2

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