MAGNETORESISTANCE OF HOT-ELECTRONS IN N-TYPE GAAS AT 77-DEGREES-K

被引:0
作者
KACHYULIS, S
PARSHYALYUNAS, I
BOCHKAREV, S
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 09期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1064 / 1065
页数:2
相关论文
共 50 条
[12]   NOISE AND DIFFUSIVITY OF HOT-ELECTRONS IN N-TYPE INSB [J].
BAREIKIS, V ;
GALDIKAS, A ;
MILIUSYTE, R ;
POZHELA, J ;
VIKTORAVICIUS, V .
JOURNAL DE PHYSIQUE, 1981, 42 (NC7) :215-220
[13]   NOISE AND DIFFUSION OF HOT-ELECTRONS IN N-TYPE INSB [J].
BAREIKIS, V ;
VIKTORAVICHYUS, V ;
GALDIKAS, A ;
MILYUSHITE, R ;
POZHELA, Y .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10) :1165-1167
[14]   MILLIMETER-WAVE FREQUENCY-RESPONSE OF HOT-ELECTRONS IN N-TYPE GAAS [J].
ABE, M ;
KANEDA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (11) :1675-+
[15]   STIMULATED CATHODO-LUMINESCENCE IN N-TYPE GAAS AT 77 DEGREES K [J].
COLEMAN, PD ;
BENNETT, GE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (04) :419-&
[16]   MONTE-CARLO CALCULATIONS OF DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN N-TYPE GAAS [J].
ABE, M ;
YANAGISAWA, S ;
WADA, O ;
TAKANASHI, H .
APPLIED PHYSICS LETTERS, 1974, 25 (11) :674-675
[17]   MOBILITY AND TEMPERATURE OF HOT-ELECTRONS IN N-TYPE INDIUM ARSENIDE [J].
KOMISSAROV, VS ;
ALEKSANDROV, VA .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11) :1423-1424
[18]   MAGNETOPHONON RESONANCE OF HOT-ELECTRONS IN N-INSB AT 77K [J].
SHIRAKAWA, T ;
HAMAGUCHI, C ;
NAKAI, J .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1973, 35 (04) :1098-1105
[19]   EXPERIMENTAL STUDY OF MILLIMETER-WAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS BY ELECTRODELESS METHOD [J].
KANEDA, S ;
ABE, M ;
HORIMA, H .
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1971, 54 (12) :113-118
[20]   DRIFT VELOCITY AND AVERAGE ENERGY OF HOT-ELECTRONS IN N-TYPE INSB [J].
VOROBEV, LE ;
GNESIN, MM ;
STAFEEV, VI .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10) :1322-1324