MAGNETORESISTANCE OF HOT-ELECTRONS IN N-TYPE GAAS AT 77-DEGREES-K

被引：0

作者：

KACHYULIS, S

PARSHYALYUNAS, I

BOCHKAREV, S

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 09期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1064 / 1065

页数：2

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[1] INVESTIGATION OF MICROWAVE FREQUENCY NOISE IN N-TYPE GAAS AT 77-DEGREES-K
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[2] NEGATIVE MAGNETORESISTANCE OF COMPENSATED N-TYPE GAAS AT 77 DEGREES K TEMPERATURE
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[3] INERTIAL PROPERTIES OF HOT-ELECTRONS IN N-TYPE GAAS
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[4] ANALYSIS OF MICROWAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS
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[5] DETERMINATION OF THE HALL FACTOR OF HOT-ELECTRONS IN N-TYPE GAAS
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[6] MAGNETOPHONON RESONANCE OF HOT-ELECTRONS IN N-INSB AT 77 DEGREES K
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[7] CAPTURE OF HOT-ELECTRONS BY IMPURITY CENTERS IN SEMIINSULATING N-TYPE GAAS
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[8] RECOMBINATION OF HOT-ELECTRONS WITH HOLES AT TRAPPING CENTERS IN EPITAXIAL N-TYPE GAAS
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[9] IMPACT EXCITATION OF SHALLOW DONOR IMPURITIES BY HOT-ELECTRONS IN N-TYPE GAAS
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[10] DEPENDENCE OF THE MICROWAVE NOISE OF HOT-ELECTRONS ON THE TEMPERATURE OF AN N-TYPE GAAS CRYSTAL
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