ELECTRON-BEAM DEPOSITION OF GOLD NANOSTRUCTURES IN A REACTIVE ENVIRONMENT

被引:77
作者
FOLCH, A [1 ]
TEJADA, J [1 ]
PETERS, CH [1 ]
WRIGHTON, MS [1 ]
机构
[1] UNIV BARCELONA,FAC FIS,E-08027 BARCELONA,SPAIN
关键词
D O I
10.1063/1.113909
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron beam deposition (EBD) is a maskless technique suitable for the fabrication of nanometer scale structures. Metals can be deposited from an organometallic gas, but simultaneous carbon deposition typically yields grossly impure (∼25% metal) deposits. We have found that the metal content of the deposited solid is dramatically improved by performing the whole EBD process in a reactive gaseous environment containing a source of oxygen (O2orH2O) in addition to the organometallic gas. With simple procedures we prepared Au deposits showing significantly diminished C content (up to 50% metal) as the partial pressure of O2 (or H2O) is increased in the gas.© 1995 American Institute of Physics.
引用
收藏
页码:2080 / 2082
页数:3
相关论文
共 10 条
[1]   ATOMIC FORCE MICROSCOPE [J].
BINNIG, G ;
QUATE, CF ;
GERBER, C .
PHYSICAL REVIEW LETTERS, 1986, 56 (09) :930-933
[2]   ELECTRON-BEAM FABRICATION OF 80-A METAL STRUCTURES [J].
BROERS, AN ;
MOLZEN, WW ;
CUOMO, JJ ;
WITTELS, ND .
APPLIED PHYSICS LETTERS, 1976, 29 (09) :596-598
[3]  
DANILATOS GD, 1988, ADV ELECTRON EL PHYS, V71, P109
[4]   A GASEOUS DETECTOR DEVICE FOR AN ENVIRONMENTAL SEM [J].
DANILATOS, GD .
MICRON AND MICROSCOPICA ACTA, 1983, 14 (04) :307-318
[5]   ELECTRON-BEAM STIMULATED CHEMICAL VAPOR-DEPOSITION OF PATTERNED TUNGSTEN FILMS ON SI(100) [J].
JACKMAN, RB ;
FOORD, JS .
APPLIED PHYSICS LETTERS, 1986, 49 (04) :196-198
[6]  
KOHLMANNVONPLATEN, 1993, J VAC SCI TECHNOL B, V11, P2219
[7]   HIGH-RESOLUTION ELECTRON-BEAM INDUCED DEPOSITION [J].
KOOPS, HWP ;
WEIEL, R ;
KERN, DP ;
BAUM, TH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :477-481
[8]   DIRECT ELECTRON-BEAM PATTERNING FOR NANOLITHOGRAPHY [J].
LEE, KL ;
HATZAKIS, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1941-1946
[9]   INSITU OBSERVATION ON ELECTRON-BEAM-INDUCED CHEMICAL VAPOR-DEPOSITION BY TRANSMISSION ELECTRON-MICROSCOPY [J].
MATSUI, S ;
ICHIHASHI, T .
APPLIED PHYSICS LETTERS, 1988, 53 (10) :842-844
[10]   NEW SELECTIVE DEPOSITION TECHNOLOGY BY ELECTRON-BEAM INDUCED SURFACE-REACTION [J].
MATSUI, S ;
MORI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L706-L708