MISFIT DISLOCATIONS IN MODULATION-DOPED IN0.2GA0.8AS/GAAS STRAINED MULTILAYER STRUCTURES

被引：4

作者：

WANG, J ^{[1
]}

STEEDS, JW ^{[1
]}

WESTWOOD, DI ^{[1
]}

机构：

[1] UNIV WALES COLL CARDIFF,DEPT PHYS,CARDIFF CF1 3TH,WALES

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transmission electron microscopy was used to investigate modulation-doped InGaAs/GaAs strained multilayer structures with In composition of about 20%. Occasional inhomogeneities were observed which acted as sources of misfit dislocations. It was found that higher In composition in these structures caused three-dimensional growth and composition modulation for thicker InGaAs layers. The densities of misfit dislocations in these structures were generally increased in comparison with undoped structure by modulation doping. The degree of density increase depended on the details of the modulation doping introduced.

引用

页码：431 / 435

页数：5

共 6 条

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