INFLUENCE OF COMPENSATION ON ELECTRICAL-CONDUCTION IN LIGHTLY DOPED P-TYPE INSB

被引：0

作者：

GERSHENZ.EM ^{[1
]}

KURILENK.IN ^{[1
]}

LITVAKGO.LB ^{[1
]}

机构：

[1] VI LENIN STATE TEACHERS INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2011 / 2012

页数：2

共 11 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2]

GERSHENZON EM, 1973, SOV PHYS SEMICOND+, V6, P1695

[3]

GERSHENZON EM, 1972, FIZ TEKH POLUPROV, V6, P1982

[4]

GERSHENZON EM, 1972, FIZ TEKH POLUPROV, V6, P2401

[5] CARRIER LIFETIME IN INDIUM ANTIMONIDE [J].

LAFF, RA ;

FAN, HY .

PHYSICAL REVIEW, 1961, 121 (01) :53-&

[6] THE THEORY OF IMPURITY CONDUCTION [J].

MOTT, NF ;

TWOSE, WD .

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1969, 19 (160) :835-&

[8]

SHKLOVSKII BI, 1971, SOV PHYS JETP-USSR, V33, P468

[9]

SHKLOVSKII BI, 1971, JETP LETT-USSR, V14, P233

[10]

SHKLOVSKII BI, 1971, PISMA ESKP TEOR FIZ, V14, P348