INFLUENCE OF COMPENSATION ON ELECTRICAL-CONDUCTION IN LIGHTLY DOPED P-TYPE INSB

被引：0

作者：

GERSHENZ.EM ^{[1
]}

KURILENK.IN ^{[1
]}

LITVAKGO.LB ^{[1
]}

机构：

[1] VI LENIN STATE TEACHERS INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2011 / 2012

页数：2

共 11 条

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[2] GERSHENZON EM, 1973, SOV PHYS SEMICOND+, V6, P1695
[3] GERSHENZON EM, 1972, FIZ TEKH POLUPROV, V6, P1982
[4] GERSHENZON EM, 1972, FIZ TEKH POLUPROV, V6, P2401
[5] CARRIER LIFETIME IN INDIUM ANTIMONIDE
LAFF, RA
FAN, HY
[J]. PHYSICAL REVIEW, 1961, 121 (01): : 53 - &
[6] THE THEORY OF IMPURITY CONDUCTION
MOTT, NF
TWOSE, WD
[J]. ADVANCES IN PHYSICS, 1961, 10 (38) : 107 - 163
[7] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &
[8] SHKLOVSKII BI, 1971, SOV PHYS JETP-USSR, V33, P468
[9] SHKLOVSKII BI, 1971, JETP LETT-USSR, V14, P233
[10] SHKLOVSKII BI, 1971, PISMA ESKP TEOR FIZ, V14, P348