ELECTRON-DIFFUSION LENGTH IN RAPID THERMAL PROCESSED P-TYPE SILICON

被引：14
|
作者：
QUAT, VT
EICHHAMMER, W
SIFFERT, P
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 20期
关键词：
D O I：
10.1063/1.100348
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1928 / 1930
页数：3
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