BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS

被引：71

作者：

ENGELMANN, RWH ^{[1
]}

LIECHTI, CA ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 11期

关键词：

D O I：

10.1109/T-ED.1977.19000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1288 / 1296

页数：9

共 29 条

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