PHOTOELECTRICAL PROPERTIES OF CUINSE2

被引：2

作者：

LAL, M ^{[1
]}

GOYAL, N ^{[1
]}

VOHRA, A ^{[1
]}

机构：

[1] KURUKSHETRA UNIV,DEPT ELECTR SCI,KURUKSHETRA 132119,HARYANA,INDIA

来源：

THIN SOLID FILMS | 1993年 / 227卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90035-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The steady-state and transient photoconductivity measurements on CuInSe2 films prepared by solution growth technique have been performed as a function of temperature and illumination intensities. Photo-conductivity is found to increase exponentially with increasing temperature and the photocurrent (I(ph)) obeys a power law: I(ph) is-proportional-to F(gamma). The transient photoconductivity data show that the rise/decay of photocurrent is fast in the beginning and slower thereafter. The overall photoelectric behaviour suggests a bimolecular recombination mechanism for CuInSe2.

引用

页码：177 / 180

页数：4

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