HIGH-VACUUM MOLECULAR-BEAM EPITAXY FOR THE GROWTH OF IV-VI COMPOUNDS

被引：11

作者：

FRANK, N ^{[1
]}

VOITICEK, A ^{[1
]}

CLEMENS, H ^{[1
]}

HOLZINGER, A ^{[1
]}

BAUER, G ^{[1
]}

机构：

[1] MET WERKE PLANSEE, A-6600 REUTTE, AUSTRIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 126卷 / 2-3期

关键词：

D O I：

10.1016/0022-0248(93)90036-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The molecular beam epitaxy growth of IV-VI compounds using background pressures of about 10(-7) Torr (during growth) instead of ultra-high vacuum background conditions is investigated. A simple high vacuum molecular beam epitaxy system is described. Calculations of the growth rate for the binary and pseudobinary compounds are compared with experimental data. Results on the growth of PbTe, PbSe and dilute magnetic Pb1-xMnxTe and Pb1-xMnxSe epitaxial films as well as on PbTe/Pb1-xMnxTe and PbSe/Pb1-xMnxSe multi-quantum-well structures are presented. Structural properties have been checked by X-ray diffraction. The electronic properties are investigated by conductivity and Hall effect measurements. These data are compared with that of samples grown under ultra-high vacuum conditions.

引用

页码：293 / 304

页数：12

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