AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES

被引：122
作者：
NICOLLIAN, EH
BERGLUND, CN
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 07期
关键词：
D O I：
10.1063/1.1659364
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3052 / +
页数：1
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