ELECTRONIC STATES NEAR BAND-GAP FOR GAAS (110) SURFACE

被引：23

作者：

MELE, EJ ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,DEPT PHYS,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

SURFACE SCIENCE | 1977年 / 66卷 / 01期

关键词：

D O I：

10.1016/0039-6028(77)90398-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：38 / 44

页数：7

共 22 条

[1] SURFACE STATES OF (110) SURFACE OF GAAS [J].

CALANDRA, C ;

SANTORO, G .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (06) :L86-L89

[2] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS [J].

CHADI, DJ ;

COHEN, ML .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01) :405-419

[3]

CHADI DJ, COMMUNICATION

[4] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[5] RELAXATION EFFECTS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (10) :4724-4726

[6]

CHELIKOWSKY JR, 1976, PHYS REV B, V13, P826

[7]

CHELIKOWSKY JR, COMMUNICATION

[8] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627

[9]

FALICOV LM, 1975, J PHYS C SOLID STATE, V8, P147, DOI 10.1088/0022-3719/8/2/009

[10] EFFECTIVE SURFACE-POTENTIAL METHOD FOR CALCULATING SURFACE-STATES [J].

FOO, EN ;

THORPE, MF ;

WEAIRE, D .

SURFACE SCIENCE, 1976, 57 (01) :323-347

← 1 2 3 →