LOW-NOISE GAAS FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY

被引：5
作者：
OMORI, M
DRUMMOND, TJ
MORKOC, H
机构：
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 07期
关键词：
D O I：
10.1063/1.92796
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：566 / 569
页数：4
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