ALUMINUM NITRIDE EPITAXIALLY GROWN ON SILICON - ORIENTATION RELATIONSHIPS

被引：61

作者：

MORITA, M

ISOGAI, S

SHIMIZU, N

TSUBOUCHI, K

MIKOSHIBA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 03期

关键词：

D O I：

10.1143/JJAP.20.L173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L173 / L175

页数：3

共 8 条

[1]

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[2]

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[3] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J].

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ERDMANN, FM ;

SIMPSON, WI .

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[4] EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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UESUGI, N ;

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MIKOSHIBA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :17-23

[5] GROWTH AND PROPERTIES OF SILICON FILMS ON ALUMINUM-NITRIDE FILMS ON SAPPHIRE [J].

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[6] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP [J].

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :292-296

[7] REACTIVE MOLECULAR-BEAM EPITAXY OF ALUMINUM NITRIDE [J].

YOSHIDA, S ;

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[8]

YOSHIDA S, 1977, 7TH P INT VAC C VIEN, P1797

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