LATTICE LOCATION OF CO IMPLANTED IN SILICON

被引：3
|
作者：
KOTAI, E
LOHNER, T
MANUABA, A
MEZEY, G
COUSSEMENT, R
DEZSI, I
LANGOUCHE, G
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期
关键词：
D O I：
10.1080/00337578008209202
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：153 / 155
页数：3
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