A computer simulation of the reverse recovery current waveform of a P-N junction undergoing forced commutation is presented. A far better simulation is obtained by using the sech function to model the recovery current as compared with the commonly used exponential function. Published maximum values of recovery current I(RM)(REC), recovery time t(rr), and snap-factor s can be used to determine the constants of the sech function. The proposed model and its response is compared with laboratory measurements of devices of various technologies. The application of the simulation to free-wheel diodes and GTO snubber diodes is illustrated.