Structural Characteristic of One Dimensional Single Crystalline of InN Nanowires

被引：1

作者：

Byeun, Yun-Ki ^{[1
]}

Chung, Yong-Keun ^{[1
]}

Lee, Sang-Hoon ^{[2
]}

Choi, Sung Churl ^{[1
]}

机构：

[1] Hanyang Univ, Dept Ceram Engn, Seoul 133791, South Korea

[2] Hanyang Univ, Grad Sch Engn, Dept Enviornm Engn, Seoul 133791, South Korea

来源：

JOURNAL OF THE KOREAN CERAMIC SOCIETY | 2007年 / 44卷 / 04期

关键词：

InN nanowire; HVPE; Defect free single crystalline; HR-TEM;

D O I：

10.4191/kcers.2007.44.4.202

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-Quality I-Dimensional InN single crystalline have been grown by Halide Vapor-Phase Epitaxy on the Au catalyst coated Si substrate using the vapor-liquid-solid growth mechanism. We have been grown 1-dimension InN nanowires having controlled the growth conditions for substrate temperature and gases flow rate. The grown InN nanowire of characteristics for morphologies, crystal structure, and element analysis were carried out by SEM, HR-TEM, and EDS respectively. And the defects of InN crystalline were analyzed by indexing of selective area diffraction pattern with attached HR-TEM. We have successfully obtained the defect-free 1-dimensional InN single crystalline nanowire at the atmosphere pressure.

引用

页码：202 / 207

页数：6

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