SIO2 HOLE TRAPS WITH SMALL CROSS-SECTION

被引：21
作者：
AFANAS'EV, VV
DENIJS, JMM
BALK, P
机构：
[1] DIMES, Delft University of Technology, NL-2600 GB Delft
[2] Institute of Physics, St. Petersburg University
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 14期
关键词：
D O I：
10.1063/1.113351
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SiO2 hole traps with small cross section (σ≤10-15cm2) in Al gated metal-oxide-silicon capacitors have been studied using vacuum ultraviolet hole injection in combination with capacitance voltage measurements. The data show that small σ hole traps are related to H/hole pairs or protons trapped in the oxide. Since accumulated positive charge and H vanish simultaneously from the oxide in times of the order of 102 s, it is proposed that they migrate together through the oxide as a proton. The small σ hole traps are not associated with defects in the as-grown oxide; they are generated by radiation induced release of atomic H. Their number is governed by the rates of release and of removal (dimerization) of atomic H.© 1995 American Institute of Physics.
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页码：1738 / 1740
页数：3
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