A CRITICAL PULLING RATE FOR REMELT SUPPRESSION IN SILICON CRYSTAL-GROWTH

被引：5

作者：

VANRUN, AMJG

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 53卷 / 02期

关键词：

D O I：

10.1016/0022-0248(81)90097-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：441 / 442

页数：2

共 10 条

[1] THE EFFECT OF DOPING ON THE FORMATION OF SWIRL DEFECTS IN DISLOCATION-FREE CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].

DEKOCK, AJR ;

VANDEWIJGERT, WM .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :718-734

[2] EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON-CRYSTALS [J].

DEKOCK, AJR ;

ROKSNOER, PJ ;

BOONEN, PGT .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (04) :311-320

[3]

DEKOCK AJR, 1973, SEMICONDUCTOR SILICO, P83

[4] FORMATION OF SWIRL DEFECTS IN SILICON BY AGGLOMERATION OF SELF-INTERSTITIALS [J].

FOLL, H ;

GOSELE, U ;

KOLBESEN, BO .

JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :90-108

[5]

GLAZOV VM, 1969, LIQUID SEMICONDUCTOR, P60

[6] ANALYSIS OF THE TEMPERATURE DISTRIBUTION IN FZ SILICON-CRYSTALS [J].

KUIKEN, HK ;

ROKSNOER, PJ .

JOURNAL OF CRYSTAL GROWTH, 1979, 47 (01) :29-42

[7]

OLETTE M, 1957, CR HEBD ACAD SCI, V244, P1033

[8]

SHASHKOV YM, 1966, FIZ TVERD TELA+, V8, P447

[9]

VANRUN AMJ, UNPUBLISHED

[10]

[No title captured]

← 1 →