DETERMINATION OF BULK CARRIER LIFETIME IN LOW-DOPED REGION OF A SILICON POWER DIODE, BY METHOD OF OPEN CIRCUIT VOLTAGE DECAY

被引：23
作者：
BASSETT, RJ
FULOP, W
HOGARTH, CA
机构：
[1] WESTINGHOUSE BRAKE ENGLISH ELECT SEMICOND,CHIPPENHAM,ENGLAND
[2] BRUNEL UNIV,PHYS DEPT,KINGSTON LANE,UXBRIDGE,MIDDLESEX,ENGLAND
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1973年 / 35卷 / 02期
关键词：
D O I：
10.1080/00207217308938533
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：177 / 192
页数：16
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