P-N-JUNCTION FORMATION IN N-ALGAAS BY BERYLLIUM ION-IMPLANTATION

被引：8

作者：

COMAS, J ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 12期

关键词：

D O I：

10.1063/1.92637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：989 / 991

页数：3

共 11 条

[1] BE-IMPLANTED (GAAL)AS STRIPE GEOMETRY LASERS [J].

BARCHAIM, N ;

LANIR, M ;

MARGALIT, S ;

URY, I ;

WILT, D ;

YUST, M ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :233-235

[2] 2-JUNCTION CASCADE SOLAR-CELL STRUCTURE [J].

BEDAIR, SM ;

LAMORTE, MF ;

HAUSER, JR .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :38-39

[3] LUMINESCENCE PROPERTIES OF BE-IMPLANTED GAAS1-XPX (X APPROXIMATELY-EQUAL-TO 0.38) [J].

CHATTERJEE, PK ;

MCLEVIGE, WV ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3003-3009

[4]

DEVLIN WJ, 1979, I PHYS C SER, V45, P510

[5] DOPING CHARACTERISTICS AND ELECTRICAL-PROPERTIES OF BE-DOPED P-TYPE ALXGA1-XAS BY LIQUID-PHASE EPITAXY [J].

FUJITA, S ;

BEDAIR, SM ;

LITTLEJOHN, MA ;

HAUSER, JR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5438-5444

[6] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[7]

JOHNSON WS, 1969, PROJECTED RANGE STAT

[8] DEPTH DISTRIBUTION OF ENERGY DEPOSITION BY ION-BOMBARDMENT [J].

MANNING, I ;

MUELLER, GP .

COMPUTER PHYSICS COMMUNICATIONS, 1974, 7 (02) :85-94

[9]

MANNING I, COMMUNICATION

[10] DIFFUSION STUDIES OF BE-IMPLANTED GAAS BY SIMS AND ELECTRICAL PROFILING [J].

MCLEVIGE, WV ;

VAIDYANATHAN, KV ;

STREETMAN, BG ;

COMAS, J ;

PLEW, L .

SOLID STATE COMMUNICATIONS, 1978, 25 (12) :1003-1008

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