ELECTRONIC-STRUCTURE OF BI2SR2CA1-XYXCU2O8+DELTA - CU 2P X-RAY-PHOTOELECTRON SPECTRA AND OCCUPIED AND UNOCCUPIED LOW-ENERGY STATES

被引：72

作者：

VANVEENENDAAL, MA ^{[1
]}

SAWATZKY, GA ^{[1
]}

GROEN, WA ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.49.1407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we will present measurements, using various kinds of spectroscopy, on the hole-doped compound Bi2Sr2Ca1-xY(x)Cu(2)O(8+delta), with x ranging from 0.0 to 1.0. Cu 2p x-ray photoelectron spectra are compared with cluster calculations using nonlocal screening effects. The consequences of hole doping and multiplet interaction are also studied. The photoemission and inverse-photoemission data indicate that the appearance of intensity at the Fermi level is a result of the shift of the chemical potential to the top of the valence band combined with a shift of spectral weight from high- to low-energy states.

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页码：1407 / 1416

页数：10

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