LOW-FREQUENCY OSCILLATIONS OF THE CURRENT IN ZINC-COMPENSATED SILICON

被引：0
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作者：
BAKHADYRKHANOV, MK
ZIKRILLAEV, NF
ARZIKULOV, EU
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 09期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An investigation was made of the oscillations of the photocurrent in zinc-compensated silicon. Regular and stable oscillations of the current were observed in n-type Si:Zn samples with resistivities 20 OMEGA.cm less-than-or-equal-to rho less-than-or-equal-to 10(5) OEMGA.cm and in p-type samples with rho greater-than-or-equal-to 5 X 10(4) OEMGA.cm. The investigation was carried out at temperatures T = 77-20 K. The maximum amplitude was I = 400 mA and the frequency varied within the range f = 10(-3)-10 Hz. The oscillations of the current in Si:Zn were attributed to a temperature-electrical instability of the current, which had been investigated thoroughly for II-VI and III-V compounds. The mechanisms of the investigated oscillations were accounted for by a model of the temperature-electrical instability allowing for the special features of the behavior of the zinc atoms in silicon.
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页码：863 / 865
页数：3
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