A SYSTEM AND PERFORMANCE OVERVIEW OF THE EXTRION-220 MEDIUM-CURRENT ION IMPLANTER

被引：1
|
作者：
PIPPINS, MW
机构：
[1] Varian Ion Implant Systems, Gloucester, MA 01930, Blackburn Industrial Park
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(91)96205-Y
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The EXTRION 220 was the first parallel scan/200 mm serial medium-current ion implanter introduced to the market (May of 1987). Since 1987, the EXTRION 220 has been utilized in advanced device development and production. Performance enhancements developed for advanced applications in the areas of particulate reduction and beam purity are discussed. The paper begins with a description of the basic EXTRION 220 design.
引用
收藏
页码：423 / 427
页数：5
相关论文
共 50 条
  • [31] A system for monitoring the ion current in the ILU-3 implanter
    Nuzhdin, V. I.
    Valeev, V. F.
    Konovalov, D. A.
    Petukhov, V. Yu.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2011, 54 (05) : 729 - 731
  • [32] ION-BEAM SYSTEM FOR THE NEW HIGH-CURRENT ION-IMPLANTATION SYSTEM EXTRION-1000
    SATOH, S
    SAKASE, T
    EVANS, E
    LIEBERT, RB
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 612 - 615
  • [33] Introduction of the MC3-II/GP System, Medium Current Ion Implanter with Enhanced Multi-Charge Beam Current
    Koike, Masazumi
    Sato, Fumiaki
    Sano, Makoto
    Kawatsu, Sho
    Kariya, Hiroyuki
    Kimura, Yasuhiko
    Kudo, Tetsuya
    Shiraishi, Miyuki
    Shinozuka, Masamitsu
    Takahashi, Yuji
    Ishida, Yuji
    Tsukihara, Mitsukuni
    Ueno, Kazuyoshi
    Sugitani, Michiro
    ION IMPLANTATION TECHNOLOGY 2012, 2012, 1496 : 336 - 339
  • [34] Nissin 300mm medium current ion implanter EXCEED2300
    Nagai, N
    Tamura, Y
    Yuasa, S
    Iwasawa, K
    Matsumoto, T
    Nakaya, M
    Nakamura, M
    Nagayama, T
    2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 415 - 418
  • [35] HIGHER CHARGE STATE ION-BEAM PURITY IN THE EATON MEDIUM CURRENT IMPLANTER
    SIMONTON, R
    KING, M
    KAMENITSA, DE
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 616 - 619
  • [36] Results of an evaluation of isotopically enriched boron trifluoride ION-X® gas delivery system on a medium current implanter
    Johnson, Ronald C.
    Nguyen, Bao Tran
    Nelson, Jess
    Heilmann, Volker
    Chiu, Robin
    MRS ADVANCES, 2025, 10 (02) : 279 - 282
  • [37] PERFORMANCE-CHARACTERISTICS OF THE EXTRION 160-10 ION-IMPLANTATION SYSTEM
    LIEBERT, R
    PEDERSEN, B
    EHRLICH, C
    CALLAHAN, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2): : 16 - 26
  • [38] A new technique for obtaining medium current erbium ion beams, for photonics devices, using typical microelectronics ion implanter
    Kretly, LC
    Cyriaco, N
    Queiroz, JEC
    1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS, 1999, : 529 - 531
  • [39] A WAFER CHARGE-UP-REDUCING SYSTEM OF A HIGH-CURRENT ION IMPLANTER
    HIGUCHI, T
    SATO, M
    TAMAI, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 605 - 608
  • [40] New computer control system for the high current ion implanter PR-80
    Sunouchi, T., 1600, (B37-38): : 1 - 2
12345