CHARACTERIZATION OF MULTILAYER SYSTEMS BY HIGH-RESOLUTION X-RAY-DIFFRACTION

The x-ray diffraction pattern of MBE-grown Ga1-xAlxAs/GaAs superlattices has been measured with d-spacing resolution d/Δd approaching 17000, corresponding to about 8500 Å-1. The resolution was achieved by employing a highly dispersive monochromator consisting of a pair of fivefold reflecting grooved silicon crystals which delivers about 104 photons s-1 to the sample. Detailed information like the presence of buffer layers, the molar fraction x, the number p of layers, the superlattice period tp, and the component layer thicknesses t1, t2 are extracted from the measured pattern by comparing it with the pattern calculated from the dynamical theory for layer structures. In addition, the influence of disorder on the determination of the above superlattice parameters is investigated by including two different models of disorder. © 1990 Springer-Verlag.