THERMAL CONDUCTIVITY OF SILICON FROM 300 TO 1400 DEGREES K

被引：433

作者：

SHANKS, HR

SIDLES, PH

MAYCOCK, PD

DANIELSON, GC

机构：

来源：

PHYSICAL REVIEW | 1963年 / 130卷 / 05期

关键词：

D O I：

10.1103/PhysRev.130.1743

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1743 / &

共 23 条

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