EVIDENCE FOR A PRIMARILY NONRADIATIVE SIO DEFECT IN GAP

被引：25

作者：

BACHRACH, RZ ^{[1
]}

LORIMOR, OG ^{[1
]}

DAWSON, LR ^{[1
]}

WOLFSTIRN, KB ^{[1
]}

机构：

[1] BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.1661078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5098 / 5101

页数：4

共 20 条

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[4] SPECTROSCOPIC OBSERVATION OF A VACANCY COMPLEX IN GAP [J].

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KURTZ, SK ;

VINK, AT ;

PETERS, RC .

PHYSICAL REVIEW LETTERS, 1971, 27 (04) :183-+

[5] ISOELECTRONIC TRAP LI-LI-O IN GAP [J].

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[6] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

FROSCH, CJ ;

HENRY, CH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&

[7]

DEAN PJ, PRIVATE COMMUNICATIO

[8]

FULLER CS, 1959, SEMICONDUCTORS, P217

[9]

HARTMAN RL, PRIVATE COMMUNICATIO

[10]

HOPFIELD JJ, 1964, 7TH P INT C PHYS SEM, P725

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