ANALYSIS OF A JUNCTION TERMINATION STRUCTURE FOR IDEAL BREAKDOWN VOLTAGE IN P-N-JUNCTION DEVICES

被引：3
作者：
TANAKA, T
MOCHIZUKI, Y
OKAMURA, M
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期
关键词：
D O I：
10.1109/T-ED.1980.19848
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：261 / 265
页数：5
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