CURRENT-HANDLING AND SWITCHING PERFORMANCE OF MOS-CONTROLLED THYRISTOR (MCT) STRUCTURES

被引：9

作者：

BAUER, F ^{[1
]}

HOLLENBECK, H ^{[1
]}

STOCKMEIER, T ^{[1
]}

FICHTNER, W ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,INTEGRATED SYST LAB,CH-8092 ZURICH,SWITZERLAND

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

关键词：

D O I：

10.1109/55.82066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOS-controlled thyristor (MCT) devices [1] have been experimentally investigated for their current-handling and switching properties. For devices with an active area of 0.084 cm2, anode currents of up to 5 A can be turned off against maximum blocking voltages of 2000 V in less than 2-mu-s. The combination of anode current and blocking voltage values is the highest ever reported for MCT's. The results obtained are comparable to state-of-the-art GTO devices.

引用

页码：297 / 299

页数：3