RESONANT TUNNELING DEVICES WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE AND DEMONSTRATION OF A 3-STATE MEMORY CELL FOR MULTIPLE-VALUED LOGIC APPLICATIONS

被引：59
作者：
CAPASSO, F
SEN, S
CHO, AY
SIVCO, D
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 07期
关键词：
D O I：
10.1109/EDL.1987.26637
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：297 / 299
页数：3
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