ZNTE/GAAS(001) - GROWTH MODE AND STRAIN EVOLUTION DURING THE EARLY STAGES OF MOLECULAR-BEAM-EPITAXY HETEROEPITAXIAL GROWTH

被引：56
作者：
ETGENS, VH
SAUVAGESIMKIN, M
PINCHAUX, R
MASSIES, J
JEDRECY, N
WALDHAUER, A
TATARENKO, S
JOUNEAU, PH
机构：
[1] CTR UNIV ORSAY,MINIST EDUC NATL & CULTURE,CEA,UTILISAT RAYONNEMENT ELECTROMAGNET,F-91405 ORSAY,FRANCE
[2] LAB MINERAL & CRISTALLOG,F-75252 PARIS,FRANCE
[3] UNIV PARIS 06,F-75230 PARIS 05,FRANCE
[4] LAB PHYS SOLIDE & ENERGIE SOLAIRE,F-06560 VALBONNE,FRANCE
[5] CEA,DRECAM,F-91190 GIF SUR YVETTE,FRANCE
[6] UNIV JOSEPH FOURIER,SEPCTROMETRIE PHYS LAB,GRENOBLE,FRANCE
[7] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.47.10607
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The initial stages of molecular-beam-epitaxy heteroepitaxial growth of ZnTe on GaAs(001) substrates are studied by in situ grazing incidence x-ray diffraction performed under ultrahigh vacuum. Pseudomorphic fully strained layers are observed for deposits up to 4 molecular layers (ML), whereas plastic relaxation starts after a critical thickness of about 5 ML together with the onset of a three-dimensional growth mode. Evidence for a normal strain gradient is obtained in partially relaxed layers. The results are confirmed by ex situ high-resolution transmission electron microscopy.
引用
收藏
页码：10607 / 10612
页数：6
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