TRANSIENT CAPACITANCE SPECTROSCOPY OF SEMICONDUCTOR-INSULATOR INTERFACE STATES - THERMALLY ACTIVATED CAPTURE CROSS-SECTION OF SI-SIO2 INTERFACE STATES

被引：12

作者：

KAMIENIECKI, E ^{[1
]}

GOMMA, N ^{[1
]}

KLOC, A ^{[1
]}

NITECKI, R ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：883 / 887

页数：5

共 17 条

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[8] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

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[9] SURFACE-GENERATION STATISTICS AND ASSOCIATED THERMAL CURRENTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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