STUDIES ON EVAPORATED INDIUM TIN OXIDE (ITO) SILICON JUNCTIONS AND AN ESTIMATION OF ITO WORK FUNCTION

被引：40
作者：
BALASUBRAMANIAN, N
SUBRAHMANYAM, A
机构：
[1] Department of Physics, Indian Institute of Technology
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 01期
关键词：
D O I：
10.1149/1.2085565
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
[No abstract available]
引用
收藏
页码：322 / 324
页数：3
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