INTERFACE STATES AT (111) HETEROJUNCTIONS

被引：8

作者：

DJAFARIROUHANI, B ^{[1
]}

DOBRZYNSKI, L ^{[1
]}

FLORES, F ^{[1
]}

LANOO, M ^{[1
]}

TEJEDOR, C ^{[1
]}

机构：

[1] INST SUPER ELECTR N,CNRS,ETUD SURFACES & INTERFACES LAB,F-59046 LILLE,FRANCE

来源：

SURFACE SCIENCE | 1979年 / 80卷 / 01期

关键词：

D O I：

10.1016/0039-6028(79)90671-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic structure at the (111)GeGaAs heterojunction is obtained selfconsistently from simplified tight-binding and pseudopotential models. Both calculations give very similar results, suggesting that an outwards relaxation between 5-10% must occur at the interface between Ge and GaAs. © 1979.

引用

页码：134 / 140

页数：7

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