INTERFACE STATES AT (111) HETEROJUNCTIONS

被引：8
|
作者：
DJAFARIROUHANI, B [1 ]
DOBRZYNSKI, L [1 ]
FLORES, F [1 ]
LANOO, M [1 ]
TEJEDOR, C [1 ]
机构：
[1] INST SUPER ELECTR N,CNRS,ETUD SURFACES & INTERFACES LAB,F-59046 LILLE,FRANCE
来源：
SURFACE SCIENCE | 1979年 / 80卷 / 01期
关键词：
D O I：
10.1016/0039-6028(79)90671-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The electronic structure at the (111)GeGaAs heterojunction is obtained selfconsistently from simplified tight-binding and pseudopotential models. Both calculations give very similar results, suggesting that an outwards relaxation between 5-10% must occur at the interface between Ge and GaAs. © 1979.
引用
收藏
页码：134 / 140
页数：7
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