0.5-MU-M CMOS DEVICES AND CIRCUITS FABRICATED USING SYNCHROTRON X-RAY-LITHOGRAPHY

被引:0
|
作者
WANG, LK
HSU, CH
SEEGER, D
SILVERMAN, J
ZICHERMAN, D
HU, CK
ACOSTA, R
VISWANATHAN, R
WARLAUMONT, J
WILSON, A
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:11 / 12
页数:2
相关论文
共 50 条
  • [1] 0.5-MU-M X-RAY-LITHOGRAPHY - DEVELOPMENTS IN MICROSTRUCTURE PROCESSES
    GENTILI, M
    PAOLETTI, A
    PETROCCO, G
    TUCCIARONE, A
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1988, 10 (06): : 733 - 744
  • [2] RADIATION-DAMAGE AND ITS EFFECT ON HOT-CARRIER INDUCED INSTABILITY OF 0.5-MU-M CMOS DEVICES PATTERNED USING SYNCHROTRON X-RAY-LITHOGRAPHY
    HSU, CCH
    WANG, LK
    SUN, JYC
    WORDEMAN, MR
    NING, TH
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 721 - 725
  • [3] HOT-ELECTRON-INDUCED INSTABILITY IN 0.5-MU-M P-CHANNEL MOSFETS PATTERNED USING SYNCHROTRON X-RAY-LITHOGRAPHY
    HSU, CCH
    WANG, LK
    WORDEMAN, MR
    NING, TH
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (07) : 327 - 329
  • [4] APPLICATION OF SYNCHROTRON X-RAY-LITHOGRAPHY TO FABRICATE FULLY SCALED 0.5 MU-M COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR-DEVICES AND CIRCUITS
    WANG, LK
    SILVERMAN, J
    SEEGER, D
    PETRILLO, E
    DIMILIA, V
    KATCOFF, D
    KWIETNIAK, K
    ACOSTA, R
    PETRILLO, K
    BRODSKY, S
    BABICH, I
    VLADIMIRSKY, O
    VOELKER, H
    VISWANATHAN, R
    WARLAUMONT, J
    WILSON, A
    DEVENUTO, R
    HILL, B
    HSIA, LC
    RIPPSTEIN, R
    WASIK, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1662 - 1666
  • [5] FABRICATION OF FULLY SCALED 0.5-MU-M N-TYPE METAL-OXIDE SEMICONDUCTOR TEST DEVICES USING SYNCHROTRON X-RAY-LITHOGRAPHY - OVERLAY, RESIST PROCESSES, AND DEVICE FABRICATION
    SILVERMAN, JP
    DIMILIA, V
    KATCOFF, D
    KWIETNIAK, K
    SEEGER, D
    WANG, LK
    WARLAUMONT, JM
    WILSON, AD
    CROCKATT, D
    DEVENUTO, R
    HILL, B
    HSIA, LC
    RIPPSTEIN, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2147 - 2152
  • [6] OPTIMIZING SYNCHROTRON-BASED X-RAY-LITHOGRAPHY FOR 0.1 MU-M LITHOGRAPHY
    HECTOR, SD
    SMITH, HI
    GUPTA, N
    SCHATTENBURG, ML
    MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) : 203 - 206
  • [7] FULLY SCALED 0.5 MU-M METAL-OXIDE SEMICONDUCTOR CIRCUITS BY SYNCHROTRON X-RAY-LITHOGRAPHY - MASK FABRICATION AND CHARACTERIZATION
    VISWANATHAN, R
    ACOSTA, RE
    SEEGER, D
    VOELKER, H
    WILSON, A
    BABICH, I
    MALDONADO, J
    WARLAUMONT, J
    VLADIMIRSKY, O
    HOHN, F
    CROCKATT, D
    FAIR, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2196 - 2201
  • [8] A 0,25-MU-M NMOS TRANSISTOR FABRICATED WITH X-RAY-LITHOGRAPHY
    BREITHAUPT, B
    DAVID, HH
    BALLHORN, RU
    JACOBS, EP
    WINDBRACKE, W
    ZWICKER, G
    MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) : 319 - 322
  • [9] SYNCHROTRON RADIATION X-RAY-LITHOGRAPHY
    HAELBICH, RP
    SILVERMAN, JP
    WARLAUMONT, JM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 222 (1-2): : 291 - 301
  • [10] SYNCHROTRON LIGHT FOR X-RAY-LITHOGRAPHY
    ROBINSON, AL
    SCIENCE, 1985, 228 (4695) : 39 - 40