CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION

被引:84
作者
BRILLSON, LJ [1 ]
BRUCKER, CF [1 ]
KATNANI, AD [1 ]
STOFFEL, NG [1 ]
MARGARITONDO, G [1 ]
机构
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53715
关键词
D O I
10.1063/1.92162
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:784 / 786
页数:3
相关论文
共 12 条
[1]   ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J].
BRILLSON, LJ ;
MARGARITONDO, G ;
STOFFEL, NG .
PHYSICAL REVIEW LETTERS, 1980, 44 (10) :667-670
[2]   TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].
BRILLSON, LJ .
PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263
[3]  
BRILLSON LJ, UNPUBLISHED
[4]  
ERIKSON LP, 1979, THIN SOLID FILMS, V64, P421
[5]  
KIM HB, 1977, I PHYS C SER B, V33, P145
[6]   PROBING DEPTH IN PHOTOEMISSION AND AUGER-ELECTRON SPECTROSCOPY [J].
LINDAU, I ;
SPICER, WE .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (05) :409-413
[7]   METAL-SEMICONDUCTOR SURFACE BARRIERS [J].
MEAD, CA .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&
[8]  
Sinha A. K., 1978, Thin films. Interdiffusion and reactions, P407
[9]   UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES [J].
SPICER, WE ;
LINDAU, I ;
SKEATH, P ;
SU, CY ;
CHYE, P .
PHYSICAL REVIEW LETTERS, 1980, 44 (06) :420-423
[10]   BEHAVIOR OF AU-INP SCHOTTKY DIODES UNDER HEAT-TREATMENT [J].
SZYDLO, N ;
OLIVIER, J .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1445-1449