DOPANT DIFFUSION IN TUNGSTEN SILICIDE

被引：36
作者：
PAN, P
HSIEH, N
GEIPEL, HJ
SLUSSER, GJ
机构：
[1] IBM, General Technology Division, Essex Junction, VT 05452, United States
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期
关键词：
Compendex;
D O I：
10.1063/1.331050
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
TUNGSTEN SILICON ALLOYS
引用
收藏
页码：3059 / 3062
页数：4
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