DOPANT DIFFUSION IN TUNGSTEN SILICIDE

被引：36

作者：

PAN, P

HSIEH, N

GEIPEL, HJ

SLUSSER, GJ

机构：

[1] IBM, General Technology Division, Essex Junction, VT 05452, United States

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

Compendex;

D O I：

10.1063/1.331050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TUNGSTEN SILICON ALLOYS

引用

页码：3059 / 3062

页数：4

共 50 条

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