STRUCTURAL-PROPERTIES OF SILICON THIN-FILMS DEPOSITED BY GLOW-DISCHARGE

被引：6

作者：

MESSANA, C

DEANGELIS, BA

CONTE, G

GRAMACCIONI, C

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1981年 / 14卷 / 06期

关键词：

D O I：

10.1088/0022-3727/14/6/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L91 / L94

页数：4

共 9 条

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[2] RF PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS FROM SICL4-H2 [J].

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Carlson D. E., 1980, POLYCRYSTALLINE AMOR

[4] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J].

IQBAL, Z ;

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VEPREK, S .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :163-165

[5] HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON [J].

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Klug H.P., 1974, XRAY DIFFRACTION PRO, V2nd ed.

[7] MICROSTRUCTURE OF PLASMA-DEPOSITED A-SI-H FILMS [J].

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LUJAN, RA .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :244-246

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Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

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