CAPTURE AND RELEASE OF ELECTRONS ON NA+-RELATED TRAPPING SITES IN THE SIO2 LAYER OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES AT TEMPERATURES BETWEEN 77-DEGREES-K AND 296-DEGREES-K

被引：26
作者：
DIMARIA, DJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 12期
关键词：
D O I：
10.1063/1.328711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：7251 / 7260
页数：10
相关论文
共 51 条
[1]  
AITKEN JM, 1976, IEEE T NUCL SCI, V23, P1526, DOI 10.1109/TNS.1976.4328533
[2]   ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J].
AITKEN, JM ;
YOUNG, DR .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1196-1198
[3]   ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J].
AITKEN, JM ;
YOUNG, DR ;
PAN, K .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3386-3391
[4]   RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J].
ASCARELLI, G ;
RODRIGUEZ, S .
PHYSICAL REVIEW, 1961, 124 (05) :1321-&
[5]   CAPTURE CROSS-SECTION OF A DIPOLE TRAP [J].
BELMONT, MR .
THIN SOLID FILMS, 1975, 28 (02) :149-156
[6]   PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J].
BERGLUND, CN ;
POWELL, RJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :573-+
[7]   RECOMBINATION MECHANISMS [J].
BONCH-BRUEVICH, VL ;
LANDSBERG, EG .
PHYSICA STATUS SOLIDI, 1968, 29 (01) :9-+
[8]   LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J].
DIMARIA, DJ ;
WEINBERG, ZA ;
AITKEN, JM .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :898-906
[9]   DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J].
DIMARIA, DJ .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4073-4077
[10]   CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS [J].
DIMARIA, DJ ;
ARNETT, PC .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) :227-244
123456