ELECTROLUMINESCENCE IN AMPHOTERIC SILICON-DOPED GAAS DIODES .1. STEADY-STATE RESPONSE

被引：26

作者：

BYER, NE

机构：

来源：

关键词：

D O I：

10.1063/1.1659078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1597 / &

共 8 条

[1] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J].

ASHLEY, KL ;

MILNES, AG .

[2] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

DUNSE, JU ;

NELSON, H ;

HAWRYLO, FZ .

[3]

KRESSEL H, PRIVATE COMMUNICATIO

[4] DOUBLE INJECTION IN INSULATORS [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1962, 125 (01) :126-&

[5] SI-DOPED AND GE-DOPED GAAS P-N JUNCTIONS [J].

MORIIZUMI, T ;

TAKAHASHI, K .

[6]

NELSON HF, TO BE PUBLISHED

[7] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J].

RUPPRECHT, H ;

WOODALL, JM ;

KONNERTH, K ;

PETTIT, DG .

WEISER, K ;

LEVITT, RS .