PHOTOTHERMAL MODULATION SPECTROSCOPY OF MULTILAYERED STRUCTURES OF AMORPHOUS-SILICON AND AMORPHOUS-SILICON CARBIDE

被引:64
作者
HATTORI, K
MORI, T
OKAMOTO, H
HAMAKAWA, Y
机构
关键词
D O I
10.1103/PhysRevLett.60.825
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:825 / 827
页数:3
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共 12 条
[1]  
ABELES B, 1984, SEMICONDUCT SEMIMET, V21, P407
[2]  
Cardona M., 1969, MODULATION SPECTROSC
[3]   CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS [J].
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7211-7214
[4]   PHOTOELECTRIC WORK FUNCTIONS OF TRANSITION, RARE-EARTH, AND NOBLE METALS [J].
EASTMAN, DE .
PHYSICAL REVIEW B, 1970, 2 (01) :1-&
[5]   The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].
Fowler, RH .
PHYSICAL REVIEW, 1931, 38 (01) :45-56
[6]  
Frova A., 1985, TETRAHEDRALLY BONDED, P271
[7]   CARRIER TRANSPORT PROPERTY IN THE AMORPHOUS-SILICON AMORPHOUS-SILICON CARBIDE MULTILAYER STUDIED BY THE TRANSIENT GRATING TECHNIQUE [J].
HATTORI, K ;
MORI, T ;
OKAMOTO, H ;
HAMAKAWA, Y .
APPLIED PHYSICS LETTERS, 1987, 51 (16) :1259-1261
[8]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER [J].
HESS, K ;
VOJAK, BA ;
HOLONYAK, N ;
CHIN, R .
SOLID-STATE ELECTRONICS, 1980, 23 (06) :585-589
[9]  
HIROSE M, 1987, 3RD INT PHOT SCI ENG, P651
[10]   RESONANT TUNNELING THROUGH AMORPHOUS-SILICON SILICON-NITRIDE DOUBLE-BARRIER STRUCTURES [J].
MIYAZAKI, S ;
IHARA, Y ;
HIROSE, M .
PHYSICAL REVIEW LETTERS, 1987, 59 (01) :125-127