THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS

被引：59

作者：

NAHORY, RE

POLLACK, MA

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 23期

关键词：

D O I：

10.1049/el:19780491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：727 / 729

页数：3

共 12 条

[1]

[Anonymous], 1977, SEMICONDUCTOR LASERS

[2]

Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[3]

BOGATOV AP, 1976, SOV PHYS SEMICONDUCT, V9, P1282

[4] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711

[5] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[6] CARRIER LIFETIME MEASUREMENT OF GAINASP/INP DOUBLE-HETEROSTRUCTURE LASERS [J].

ITAYA, Y ;

SUEMATSU, Y ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) :1057-1058

[7] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].

NAHORY, RE ;

POLLACK, MA ;

JOHNSTON, WD ;

BARNS, RL .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :659-661

[8] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J].

OE, K ;

SUGIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :2003-2004

[9]

PANISH MB, 1974, APPLIED SOLID STATE, V4, P236

[10] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

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